氧化铟
indiumtrioxide
产品编号.: | A312432 | CAS号: | 1312-43-2 |
分子式: | In2O3 | 分子量: | 277.6342 |
纯度: | 99.99% | MDL NO.: |
中文名称:氧化铟
CAS号:1312-43-2
中文别名:三氧化二铟; 氧化銦; 氧化铟, PURATRONIC|R, 99.997% (METALS BASIS); 氧化铟, 99.995% (METALS BASIS); 氧化铟, 99.99% (METALS BASIS); 氧化铟, 99.9% (METALS BASIS); 氧化铟, 99.999% (METALS BASIS); 氧化铟, 聚合物前驱体, IN HEXANE, OXIDE ^=30 WT%; 氧化铟, 掺锡, 聚合物前驱体, OXIDE ^=20 WT%; 氧化铟, 99.5% MIN (METALS BASIS)
英文名称:indiumtrioxide
英文别名:diindium trioxide; INDIUM(+3)OXIDE; INDIUM(III) OXIDE; INDIUM SESQUIOXIDE; In2-O3; Indium oxide (In2O3); Indium(II) oxide; indiumoxide(in2o3); INDIUM(III) OXIDE, NANOPOWDER, <50NM, 99.9% METALS BASIS; INDIUM(III) OXIDE, 99.99%; INDIUM(III) OXIDE, 99.999% METALS BASIS; Indium(Iii)Oxide99.999%; Indium(III) oxide, 99.9%; INDIUM OXIDE, 99.9%; INDIUM OXIDE, 99.99%; Indium (Ⅲ) oxide; Indium(III)oxide(99.999%-In)PURATREM; indium(iii) oxide, puratronic
EINECS:215-193-9
分子式:In2O3
分子量:277.6342
CAS号:1312-43-2
中文别名:三氧化二铟; 氧化銦; 氧化铟, PURATRONIC|R, 99.997% (METALS BASIS); 氧化铟, 99.995% (METALS BASIS); 氧化铟, 99.99% (METALS BASIS); 氧化铟, 99.9% (METALS BASIS); 氧化铟, 99.999% (METALS BASIS); 氧化铟, 聚合物前驱体, IN HEXANE, OXIDE ^=30 WT%; 氧化铟, 掺锡, 聚合物前驱体, OXIDE ^=20 WT%; 氧化铟, 99.5% MIN (METALS BASIS)
英文名称:indiumtrioxide
英文别名:diindium trioxide; INDIUM(+3)OXIDE; INDIUM(III) OXIDE; INDIUM SESQUIOXIDE; In2-O3; Indium oxide (In2O3); Indium(II) oxide; indiumoxide(in2o3); INDIUM(III) OXIDE, NANOPOWDER, <50NM, 99.9% METALS BASIS; INDIUM(III) OXIDE, 99.99%; INDIUM(III) OXIDE, 99.999% METALS BASIS; Indium(Iii)Oxide99.999%; Indium(III) oxide, 99.9%; INDIUM OXIDE, 99.9%; INDIUM OXIDE, 99.99%; Indium (Ⅲ) oxide; Indium(III)oxide(99.999%-In)PURATREM; indium(iii) oxide, puratronic
EINECS:215-193-9
分子式:In2O3
分子量:277.6342
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